Reece, Peter JPaiman, SuriatiAbdul-Nabi, OsamaGao, QiangGal, MichaelTan, Hark HoeJagadish, C2015-12-022015-12-020003-6951http://hdl.handle.net/1885/16963In this letter, we demonstrate that microphotoluminescence may be combined with optical trapping for effective optical characterization of single target InP semiconductor nanowires in suspension. Using this technique, we may investigate structural properties of optically trapped nanowires, such as crystalline polytypes and stacking faults. This arrangement may also be used to resolve structural variations along the axis of the trapped nanowire. These results show that photoluminescence measurements may be coupled with optical tweezers without degrading the performance of the optical trap and provide a powerful interrogation tool for preselection of components for nanowire photonic devices.We thank the Australian Research Council for the financial support of this research.3 pages© 2009 American Institute of Physics. AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.3225148 http://publishing.aip.org/authors/copyright-reuse http://www.sherpa.ac.uk/romeo/issn/0003-6951/ Author can archive publisher's version/PDF (Sherpa/Romeo as of 2/12/2015).microphotoluminescenceoptical trappingoptical characterizationsingle target InP semiconductor nanowiresstructural propertiescrystalline polytypes and stacking faultsphotoluminescence200910.1063/1.32251482015-12-08