Feng, RuixingKremer, FelipeSprouster, D. J.Mirzaei, SaharDecoster, StefanGlover, C JMedling, ScottHansen, John LNylandsted-Larsen, ARusso, Salvy PRidgway, Mark C2021-06-152021-06-152166-3831http://hdl.handle.net/1885/237363In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C+ In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C-In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.We also thank the Australian Research Council and Australian Synchrotron for support.application/pdfen-AU© 2016 The Authorshttps://creativecommons.org/licenses/by/4.0/SiGeC + In co-dopingX-ray absorption fine structureHall Effect201710.1080/21663831.2016.11692292020-11-23Creative Commons Attribution licence