Ding, ZetaoYan, DiStuckelberger, JosuaPhang, PhengChen, WenhaoSamundsett, ChristianYang, JieWang, ZhaoZheng, PeitingZhang, XinyuWan, YimaoMacdonald, Daniel2024-03-040927-0248http://hdl.handle.net/1885/315653Polycrystalline silicon (poly-Si) passivating contacts are promising technologies to promote the efficiency of silicon solar cells, due to their low carrier recombination and low contact resistivity. In this work, we present phosphorus spin-on doping as an alternative doping method to fabricate high performance poly-Si passivating contacts. The influences of thermal treatments and intrinsic amorphous Si thickness on poly-Si passivating contact quality were investigated. A high implied open-circuit voltage of above 730 mV together with a low contact resistivity below 4 mΩ⋅cm2 were obtained for 100 – 230 nm thick poly-Si layers after a thermal treatment at 975 °C for 60 min followed by a forming gas annealing. The promising results presented in this work imply that phosphorus spin-on doping can be an effective doping method alternative to conventional POCl3 diffusion.This work has been supported by the Australian Renewable Energy Agency under project RND016, and through the Australian Centre for Advanced Photovoltaics. JS acknowledges support from an ACAP fellowship. We acknowledge the Australian National Fabrication Facility (ANFF) for access to the ellipsometer.application/pdfen-AU© 2020 The authorsSpin-on dopingLiquid dopingEx-situ dopingPhosphorusn-typePolycrystalline siliconPolySiPoly-SiPassivating contactTOPConPOLOSolar cell202110.1016/j.solmat.2020.1109022022-10-16