Dissanayake, SenaliChow, Philippe K.Lim, QiWilliams, JimWarrender, Jeffrey M.Sher, Meng-Ju2024-04-1029 August978-1-7281-9424-0http://hdl.handle.net/1885/316638Hyperdoping semiconductor is one of the material candidates for intermediate band photovoltaics. We investigate implantation damage and associated defects. Time resolved terahertz spectroscopy reveals that charge carrier lifetime is hindered by defects not detected by conventional microscopic and spectroscopic techniques.application/pdfen-AU© 2021 IEEEInvestigating Implantation Damage of Hyperdoped Semiconductors202110.1109/IRMMW-THz50926.2021.95673592022-11-20