Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability

Boudinov, Hde Souza, J PJagadish, Chennupati2015-12-100168-583Xhttp://hdl.handle.net/1885/68308The increasing of the sheet resistance (Rs) of n-type conductive InP layers during proton irradiation and the stability of the formed isolation during post-irradiation annealing were investigated. It was found that the threshold dose (Dth) to convert theKeywords: Annealing; Carrier concentration; Crystal defects; Ion bombardment; Proton irradiation; Semiconducting indium phosphide; Thermodynamic stability; Electrical isolation; Semiconducting films InP; Ion bombardment; Isolation; Sheet resistance; Thermal stabilityElectrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability200110.1016/S0168-583X(00)00529-22015-12-10