Recart, FedericoCuevas, Andres2015-12-070018-9383http://hdl.handle.net/1885/18040The quasi-static capacitance-voltage (C-V) technique measures the dependence of junction capacitance on the bias voltage by applying a slow, reverse-bias voltage ramp to the solar cell in the dark, using simple circuitry. The resulting C-V curves containKeywords: Capacitance measurement; Electric conductivity; Electric potential; Electric space charge; Photovoltaic cells; Semiconductor doping; Semiconductor junctions; Substrates; Capacitance-voltage (C-V); Emitter doping; Junction capacitance; Resistivity substrat Capacitance; Photovoltaic cells; Space charge region (SCR)Application of junction capacitance measurements to the characterization of solar cells200610.1109/TED.2006.8708462015-12-07