Williams, J. S.Ridgway, M. C.Elliman, R. G.Davies, J. A.Johnson, S. T.Palmer, G. R.2026-01-032026-01-030168-583XORCID:/0000-0002-1304-4219/work/167651100https://hdl.handle.net/1885/733803461MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.The Special Research Centres Schemes and the Australian Research Council are acknowledged for financial support.5en1991-04-0210.1016/0168-583X(91)96240-L3943059410