Ridgway, M. C.Elliman, R. G.Faith, M. E.Kemeny, P. C.Davies, M.2026-01-032026-01-030168-583XORCID:/0000-0002-1304-4219/work/167651108https://hdl.handle.net/1885/733803435The application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP.We thank S.J. Rolfe for the SIMS measurements and the Australian Department of Indus!ry, Technology and Regional Development and the Australian Teiecommunica-tions and Electronics Research Board for partial funding.4en1995-03-0110.1016/0168-583X(94)00510-90001513895