Nawaz (Saleh), MuhammadVenkatachalam, DineshBelay, KidaneKim, Tae-HyunElliman, Robert2015-12-10December 19781424473335http://hdl.handle.net/1885/51566We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1-xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on theKeywords: Bistables; Conducting state; DC voltage; Low-conducting state; Non-polar; Resistive random access memory; Resistive switching; Resistive switching mechanisms; Short pulse; Silicate thin films; Electroforming; Hafnium; Magnetrons; Microelectronics; Silicat201010.1109/COMMAD.2010.56997302016-02-24