Gao, QiangFu, LanJagadish, ChennupatiTan, Hark Hoe2015-12-130003-6951http://hdl.handle.net/1885/77122The control of interdiffusion in InGaAsN/GaAs quantum dots by thermal stress was discussed. It was observed that by depositing TiO2 layers without degrading the pholuminescence properties, the thermal interdiffusion was effectively suppressed. A controlled blueshifting of the band gap was achieved by combining annealing temperature and TiO2 thickness. It was suggested that the method has significant potential for optoelectronic device integration using selective-area defect engineering.Keywords: Annealing; Atomic force microscopy; Interdiffusion (solids); Monochromators; Photodiodes; Photoluminescence; Semiconducting indium; Solid state lasers; Thermal stress; Titanium oxides; Band gap; Blueshifting; Electron beam evaporation; Rapid thermal annea200410.1063/1.17608862015-12-11