Joyce, Hannah JGao, QiangJagadish, ChennupatiKim, YongZou, JinSmith, Leigh MJackson, Howard EYarrison-Rice, Jan MParkinson, PatrickJohnston, Michael BTan, Hark Hoe2015-12-082015-12-080079-6727http://hdl.handle.net/1885/38329III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the rad201110.1109/ICMAP.2013.67334562015-12-08