Maher, D. M.Seidel, T. E.Williams, J. S.Elliman, R. G.Knoell, R. V.Ellington, M. B.Hull, R.Jacobson, D. C.2026-01-032026-01-030161-6374ORCID:/0000-0002-1304-4219/work/167651138https://hdl.handle.net/1885/733803360Recent fundamental investigations of the solid-phase amorphous to crystalline transformation in silicon are reviewed. Three modes of inducing solid-phase regrowth are discussed, namely furnace processing, rapid-thermal processing and ion-beam processing. Topics emphasized include: extended defect states of the material; incubation solid-phase regrowth; continuous solid-phase regrowth; and the constraints which extended-defect annealling and dopant-profile broadening impose on obtaining n** plus and p** plus shallow junctions by a technology which is based on a preamorphization, dopant implant and solid-phase expitaxial regrowth sequence.18en19860022906688