Lei, W.Jagadish, C.Tan, Hark Hoe2015-11-182015-11-180003-6951http://hdl.handle.net/1885/16512Engineering the surface energy, interface energy, and elastic strain energy in the system viaSb exposure is used to realize the control on the morphology and optical properties of self-assembled InP-based InAsSb/InGaAs nanostructures. By flowing trimethylantimony precursor over the surface of InGaAs buffer layer before the growth of InAsSbnanostructures, the surface/interface energy in the system is reduced, while the strain energy in the system is enhanced, which lead to a shape transition from dot to dash, and to wire for the InAsSbnanostructures. As a result of their morphology changes, the InAsSbnanostructures show different polarization characteristics in their photoluminescence emission.Financial support from Australian Research Council is gratefully acknowledged.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/11/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3659695Keywords: Elastic strain energy; Interface energy; Morphology changes; Photoluminescence emission; Polarization characteristics; Self-assembled; Shape transitions; Trimethylantimony; Indium antimonides; Morphology; Nanostructures; Strain energy; Surface chemistry;2011-10-1110.1063/1.36596952016-02-24