Nursam, NatalitaWeber, KlausJin, HaoRen, YonglingSmith, Paul2015-12-071567-1739http://hdl.handle.net/1885/23562Electron paramagnetic resonance (EPR) measurements were employed to observe the dominant defect at the thermally grown (1 1 1) Si-SiO2 interface, namely the Pb center, of samples with oxides grown at moderate temperatures. The presence of boron diffusionKeywords: Boron diffused; Boron diffusions; Electron paramagnetic resonance; Emitter sheet resistance; Higher temperatures; Interface property; Moderate temperature; Moisture barriers; Surface concentration; Boron; Boron compounds; Degradation; Electric resistance; Boron emitter; Degradation; Electron paramagnetic resonance; Si-SiO 2 interface201010.1016/j.cap.2010.02.0532016-02-24