Biju, Kuyyadi P.Liu, XinjunShin, JunghoKim, InsungJung, SeungjaeSiddik, ManzarLee, JoonmyoungIgnatiev, AlexHwang, Hyunsang2015-12-101567-1739http://hdl.handle.net/1885/65836Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown by a sol-gel spin-coating technique. The crystal structure and chemical bonding states of the TiO2 films are investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias and results in a rectification ratio >60 at 2 V in a low-resistance state. The switching mechanisms in our device can be interpreted as oxygen-migration- induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can reduce misreading errors in a cross-point array and provides a feasible way to achieve high memory density.Keywords: Bistables; Bottom electrodes; Chemical bonding state; Cross-point application; Cross-point array; Low-resistance state; Memory density; Random access memories; Rectification ratio; Rectifying effect; Resistive switching; Reverse bias; Schottky contacts; S Cross-point application; Pt/TiO2/W; Rectifying effect; Resistive random-access memory (RRAM); Sol-gel201110.1016/j.cap.2011.07.0182016-02-24