Liu, An YaoNguyen, Hieu T.Macdonald, Daniel2026-07-032026-07-031862-6300ORCID:/0000-0001-5792-7630/work/219174021ORCID:/0000-0003-4579-5495/work/219175239https://hdl.handle.net/1885/733812696Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm−2–100 kW cm−2. Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 1017 cm−3 and [P] below 8 × 1016 cm−3.4enPublisher Copyright: © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimphotoluminescence spectroscopyshallow dopantsilicon2016-11-0110.1002/pssa.20160033584978174470