Kuznetsov, A. Yu.Wong-Leung, JenniferHallén, A.Jagadish, C.Svensson, B. G.2015-10-082015-10-080021-8979http://hdl.handle.net/1885/15809A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si⁺ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10¹⁰–4.9×10¹³ ions/cm² s) and keeping the implantation dose constant at 5×10¹⁴ Si⁺/cm². The implants were performed both at room and elevated temperatures, up to 220 °C. Rutherford backscattering spectrometry in the channelling mode using 2 MeV He⁺ ions was employed to measure ion implantation damage profiles in the samples. For the flux interval used the most, pronounced dynamic annealingeffect was detected at 80–160 °C, having an activation energy of 1.3 eV. For example, at 100 °C the amount of disordered Si atoms at the projected ion range is reduced by a factor of 4 by decreasing the ion flux from 4.9×10¹³ to 1.9×10¹⁰ ions/cm² s. The results are discussed in terms of migration and annihilation of intrinsic type defects for both the Si- and C-sublattices. In addition, two regions for the damage accumulation – at the surface and at the damage peak for 100 keV Si⁺ ions – are observed.Partial financial support for this work was received from the Swedish Foundation for Strategic Research ~SSF!, the Swedish Foundation for International Cooperation in Research and Higher Education ~STINT!, the Norwegian Research Council ~NFR!, and the Nordic Academy for Education and Research Training ~NorFA!. One of the authors ~J.W.L.! acknowledges the Australian Research Council for funding under the fellowship program.http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 8/10/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1622797Keywords: Activation energy; Amorphization; Annealing; Crystal lattices; Ion implantation; Radiation damage; Rutherford backscattering spectroscopy; Silicon wafers; Annihilation; Temperature dependence; Silicon carbide2003-12-0110.1063/1.16227972015-12-12