Jones, K SLind, A. G.Hatem, C.Moffatt, S.Ridgway, Mark C2015-12-13May 12-179781607683766http://hdl.handle.net/1885/81173A brief review of n-type doping of GaAs, InGaAs and InP using ion implantation is presented. While the diffusion of the amphoteric dopant Si is not a significant issue its activation is limited to around 1×10 19/cm3. This has prompted many studies into fKeywords: Amphoteric dopants; Co-implantation; Dopant activation; Elevated temperature; II-IV semiconductors; Low energy implants; N-channel devices; Surface degradation; Integrated circuits; Ion implantation; Silicon; Site selection; Semiconductor doping201310.1149/05303.0097ecst2016-02-24