Short, K. T.Chivers, D. J.Elliman, R. G.Liu, J.Pogany, A. P.Wagenfeld, H.Williams, J. S.2026-01-032026-01-0304440086910272-9172ORCID:/0000-0002-1304-4219/work/167651152https://hdl.handle.net/1885/7338034316enION BEAM-INDUCED DAMAGING AND DYNAMIC ANNEALING PROCESSES IN SILICON.19840021290836