Cho, Hyun-JiYoon, Jong-HwanElliman, RobertWilkinson, Andrew2015-12-102015-12-100374-4884http://hdl.handle.net/1885/50862Si nanocrystals embedded in silicon dioxide films are exposed to an atomic hydrogen plasma at different temperatures in the range from 100 °C to 350 °C. The photoluminescence (PL) from the nanocrystals is shown to increase in intensity with increasing eKeywords: Hydrogen passivation; Photoluminescence; Si nanocrystal200910.3938/jkps.54.7362016-02-24