Chen, JiangboWang, LiSu, XueqiongWang, Rongping2015-12-130022-3093http://hdl.handle.net/1885/71221High purity Ga2O3, In2O3, and ZnO powders were weighted at a molar ratio of 1: 8: 1, and then InGaZnO (IGZO) ceramic target was fabricated by conventional solid state reaction method in air. IGZO thin films were subsequently prepared by pulsed laser deposition (PLD) method under different pressures at room temperature. The structural and physical properties of the as-grown films were diagnosed by various tools. It was confirmed that all the films exhibited amorphous structure. With the increase of oxygen pressure from 1.0 Pa to 15.0 Pa, surface roughness of IGZO films increased from 0.60 nm to 1.82 nm. The sample deposited under 10.0 Pa oxygen partial pressure had a maximum carrier mobility of 28.6 cm2/(V·s), a minimum resistivity of 5.57 × 10- 4 Ω cm, and a highest carrier concentration of 3.95 × 1020 cm- 3.Keywords: Amorphous structures; As-grown films; Ceramic target; High purity; IGZO; Molar ratio; Oxygen partial pressure; Oxygen pressure; Room temperature; Solid state reaction method; Structural and physical properties; ZnO powder; Amorphous films; Oxygen vacancie IGZO; Oxygen vacancy; Pulsed laser deposition; Solid-state reaction201210.1016/j.jnoncrysol.2011.12.0392016-02-24