Glover, ChristopherSchmitt, TMattesini, MaurizioAdell, MIlver, LKanski, JKjeldgaard, LAgaker, MarcusMartensson, NAhuja, RajeevNordgren, JRubensson, Jan-Erik2015-12-100368-2048http://hdl.handle.net/1885/39495Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics.Keywords: Attosecond; Crystalline Ge; Electron dynamics; Excited electrons; Ionization limit; Resonant inelastic soft X-ray scattering; Semiconductors; Soft X-ray scattering (RIXS); Theoretical prediction; TWo-step model; Ultrafast dynamics; Wide energy range; Dyna Semiconductors; Soft X-ray scattering (RIXS); Spectroscopy; Synchrotron radiation; Ultrafast dynamics200910.1016/j.elspec.2009.05.0172016-02-24