Li, Tsu-Tsung AndrewMcIntosh, Keith R.Cuevas, Andres2015-12-182015-12-180021-8979http://hdl.handle.net/1885/95090The validity of a widely used simple closed-form expression for the recombination associated with dangling bonds in hydrogenated amorphous silicon (a-Si:H) is linked to the relative position of the distribution of the dangling bond states with respect to the quasi-Fermi levels for trapped electrons and holes. However, these quasi-Fermi levels for traps have not been derived before. In this work, we derive the four relevant quasi-Fermi levels for traps associated with dangling bonds in a-Si:H and clarify the limitations of the simple model.http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/12/15). Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3037235Keywords: Amorphous silicon; Fermi level; Fermions; Semiconducting silicon compounds; Silicon; Closed forms; Hydrogenated amorphous silicons; Recombination models; Relative positions; SIMPLE models; Trapped electrons; Dangling bonds2008-12-1010.1063/1.30372352016-02-24