Yang, XinboFujiwara, K.Abrosimov, N. V.Gotoh, R.Nozawa, J.Koizumi, H.Kwasniewski, A.Uda, S.2015-09-202015-09-200003-6951http://hdl.handle.net/1885/15584Crystal-melt interfacemorphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interfacemorphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.Xinbo Yang gratefully acknowledges the Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for financial support. This work was partially funded by the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers.”5 pageshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.3698336Keywords: Critical growth; Crystal-melt interface; Ge concentrations; High growth velocities; Morphological transformations; Planar interface; Physical properties; Physics; Silicon alloys201210.1063/1.36983362016-02-24