Ernst, MarcoBrendel, Rolf2015-12-070927-0248http://hdl.handle.net/1885/19241We derive and apply a model that determines the effective minority carrier lifetime of macroporous crystalline silicon samples as a function of bulk lifetime, surface passivation and pore morphology. Two cases are considered: A layer of periodic macropores at the surface of a silicon wafer and a free standing macroporous silicon layer. We compare the model with experimental lifetime measurements for samples with randomly positioned macropores with a length of 1040 ?m. The pores have an average pore diameter of 2.4 ?m and an average pore distance of 5.2 ?m. The surface is passivated by thermal oxidation. The model agrees with the measurements if we assume an average surface recombination velocity S=24 cm/s at the pore surface. � 2011 Elsevier B.V. All rights reserved.Keywords: Bulk lifetime; Crystalline silicons; Lifetime measurements; Macro porous silicon; Macropores; Macroporous; Macroporous Si; Minority carrier lifetimes; Modeling; Pore diameters; Pore morphology; Pore surface; Porous si; Surface passivation; Surface recombi Carrier lifetime; Carrier transport; Macroporous Si; Modeling; Porous Si201110.1016/j.solmat.2011.01.0172016-02-24