Yang, ZhongshuStuckelberger, JosuaMacdonald, DanielLiu, AnYao2025-12-312025-12-31978-1-7281-6118-1978-1-7281-6117-40160-8371ORCID:/0000-0001-5792-7630/work/197127726ORCID:/0000-0003-4579-5495/work/197129799https://hdl.handle.net/1885/733797784This paper presents 1D and 3D numerical simulations of the diffusion-limited gettering process for iron in silicon by the polysilicon/oxide passivating contact structures. Simulation results reveal that a 1D model is sufficient to simulate the gettering kinetics, as iron diffusion through the oxide interlayer can take place via both direct diffusion and diffusion through pinholes, where either of these two are mainly 1D. In addition, we provide a simple exponential approximation to describe the gettering kinetics, which can be used to extract the blocking effect of the oxide interlayer in the cases where the Fe transport factor in oxide is less than 1×10-5.This work was supported by the Australian Renewable Energy Agency (ARENA) through project 2017-RND017 and the Australian Centre for Advanced Photovoltaics (ACAP). A.L. acknowledges funding from the ACAP Postdoctoral Fellowship scheme.6enPublisher Copyright: ©2022 IEEE.getteringpolysilicon/oxide passivating contactssilicon solar cellssimulation202210.1109/PVSC48317.2022.1063824985202837947