Biermanns, A.Carbone, DinaBreuer, SteffanJacques, Vincent L.R.Schulli, TobiasGeelhaar, L.Pietsch, U.2015-12-131862-6254http://hdl.handle.net/1885/77816We study by X-ray nanodiffraction the statistical distribution of the two possible twinned zinc-blende (ZB) orientations as well as the occurrence of the wurtzite structure within single GaAs nanowires (NWs) grown by molecular beam epitaxy on Si(111). A fKeywords: Fast scanning; GaAs; Gaas nanowires; Si (1 1 1); Statistical distribution; Wurtzite structure; X-ray nanodiffraction; Zinc-blende; Crystal structure; Gallium arsenide; Molecular beam epitaxy; Nanowires; Semiconducting gallium; X ray diffraction; Zinc sulf Crystal structure; GaAs; Nanowires; X-ray diffraction201310.1002/pssr.2013072462016-02-24