Elliman, RobertNawaz (Saleh), MuhammadVenkatachalam, DineshKim, Tae-HyunBelay, KidaneKarouta, Fouad2015-12-10December 19781467330459http://hdl.handle.net/1885/59902We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.Keywords: Film microstructures; High-k dielectric; Non-volatile memory application; Recent researches; Resistive Random Access Memory (ReRAM); Resistive switching; Switching characteristics; Transition-metal oxides; Data storage equipment; Microelectronics; Switchi201210.1109/COMMAD.2012.64723902016-02-24