Stritzker, BElliman, RobertZou, Jin2015-12-100168-583Xhttp://hdl.handle.net/1885/68477Ge substrates of (100) orientation were irradiated with 1.0 MeV Ge ions at temperatures in the range from -180°C to 500°C. Pronounced swelling of the irradiated material up to 4000 Å, associated with the formation of a porous surface layer, was evidentKeywords: Annealing; Density (specific gravity); Ion bombardment; Ion implantation; Porous materials; Sputtering; Surface structure; Swelling; Thermodynamic stability; Transmission electron microscopy; Self ion induced swelling; Semiconducting germanium Ge self-ion irradiation; Porous germanium; Swelling200110.1016/S0168-583X(00)00597-82015-12-10