Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature

Kucheyev, SergeiWilliams, JamesZou, JinLi, GangJagadish, ChennupatiTitov, A I2015-12-130168-583Xhttp://hdl.handle.net/1885/71934The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN2) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. ResultsKeywords: Crystal defects; Gallium compounds; Ion bombardment; Rutherford backscattering spectroscopy; Thermal effects; Transmission electron microscopy; Channeling spectrometry; Ion implantation Collision cascade; Defects; GaN; Ion implantationEffect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature200210.1016/S0168-583X(01)01309-X2015-12-11