Santiago, PabloSchauries, DanielNadzri, AllinaVora, KaushalRidgway, Mark CKluth, Patrick2016-06-14June 30-Ju9781510801776http://hdl.handle.net/1885/102659Amorphous silicon oxynitride (SiO<inf>x</inf>N<inf>y</inf>) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 μm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X-ray scattering (SAXS). The radial density of the ion tracks resembles a core-shell structure with a typical radius of ∼ 1.8 + 2.4 nm in the case of Si<inf>3</inf>N<inf>4</inf> and 2.3 + 3.2 nm for SiO<inf>2</inf>.Author/s retain copyright201510.1051/epjconf/201591000082016-06-14