Macdonald, DCuevas, Andres2003-07-302004-05-192011-01-052004-05-192011-01-052001http://hdl.handle.net/1885/40841http://digitalcollections.anu.edu.au/handle/1885/40841Injection-level dependent lifetime curves of iron-contaminated silicon wafers of various resistivities have been modeled using Shockley-Read- Hall theory. The modeling allows accurate determination of the capture cross-sections of FeB pairs. These cross-sections are then used to extend the validity of a commonly used method for determining iron concentrations to all resistivities. The impact of interstitial iron on solar cell parameters is also modeled and discussed.225807 bytes352 bytes352 bytesapplication/pdfapplication/octet-streamapplication/octet-streamen-AUiron-contaminated silicon wafersShockley-Read-Hall theoryFeB pairslifetime spectroscopydiffusion lengthssilicon solar cells2001