Gao, QBuda, ManuelaJagadish, ChennupatiTan, Hark Hoe2006-01-172006-03-272011-01-052006-03-272011-01-052005http://hdl.handle.net/1885/43095An InGaAsN single-layer-QD laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition. The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at RT. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures.366956 bytesapplication/pdfen-AUquantum dotsMOCVDsemiconductor lasers2005