Bob, Brion P.Kohno, AtsushiCharnvanichborikarn, SupakitWarrender, Jeffrey M.Umezu, IkurouTabbal, MalekWilliams, James S.Aziz, Michael J.2015-11-242015-11-240021-8979http://hdl.handle.net/1885/16632Topographically flat, single crystal silicon supersaturated with the chalcogens S, Se, and Te was prepared by ion implantation followed by pulsed laser melting and rapid solidification. The influences of the number of laser shots on the atomic and carrier concentration-depth profiles were measured with secondary ion mass spectrometry and spreading resistance profiling, respectively. We found good agreement between the atomic concentration-depth profiles obtained from experiments and a one-dimensional model for plane-front melting, solidification, liquid-phase diffusion, with kinetic solute trapping, and surface evaporation. Broadband subband gap absorption is exhibited by all dopants over a wavelength range from 1 to 2.5 microns. The absorption did not change appreciably with increasing number of laser shots, despite a measurable loss of chalcogen and of electronic carriers after each shot.One of the authors M.T. acknowledges the financial support of the Fulbright Program. This research was supported in part by the U.S. Army ARDEC under Contract No. W15QKN-07- P-0092.http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 24/11/15). Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3415544Keywords: Atomic concentration; Chalcogens; Electronic carriers; Laser shots; Liquid-phase diffusion; One-dimensional model; Pulsed laser; Single crystal silicon; Solute trapping; Spreading resistance profiling; Subband gap absorption; Subband-gap; Surface evaporat2010-06-1610.1063/1.34155442016-02-24