Lei, W.Jagadish, C.Ren, Q. J.Lu, J.Chen, Z. H.Tan, Hark Hoe2015-09-172015-09-170003-6951http://hdl.handle.net/1885/15514This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes QDashes. The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its frequency due to the increased compressive strain.Financial support from Australian Research Council DP0774366 is gratefully acknowledged.Publishers version/PDF may be used on author's personal website, institutional website or institutional repository http://www.sherpa.ac.uk/romeo/issn/0003-6951 Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at 10.1063/1.3522889strain relaxationphonon confinement effect201010.1063/1.35228892015-12-10