Lederer, MaximilianLuther-Davies, BarryJagadish, ChennupatiHaiml, MSiegner, UKeller, UTan, Hark Hoe2015-12-130003-6951http://hdl.handle.net/1885/93421The nonlinear optical absorption of arsenic and oxygen implanted epitaxial GaAs for a range of ion doses and annealing temperatures were examined. Results showed that ion implantation decreases response time (τA) and parameter (Mmax), with the decrease iKeywords: Amorphization; Annealing; Ion implantation; Light absorption; Light modulation; Nonlinear optics; Nonlinear optical absorption; Semiconducting gallium arsenide19992015-12-12