Jolley, GregXiao, BFu, LanJagadish, ChennupatiTan, Hark Hoe2015-12-100022-3727http://hdl.handle.net/1885/39593We report on the device parameters of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum-dots- in-a-well infrared photodetectors annealed at various temperatures from 700 to 850 °C. The temperature dependent dark current-voltage characteristics are found to have aEffects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors200910.1088/0022-3727/42/11/1151032015-12-09