Liu, XinjunSadaf, Sharif Md.Son, MyungwooShin, JunghoPark, JubongLee, JoonmyoungPark, SangsuHwang, Hyunsang2015-12-100957-4484http://hdl.handle.net/1885/65581The combination of a threshold switching device and a resistive switching (RS) device was proposed to suppress the undesired sneak current for the integration of bipolar RS cells in a cross-point array type memory. A simulation for this hybrid-type device shows that the matching of key parameters between switch element and memory element is an important issue. Based on the threshold switching oxides, a conceptual structure with a simple metal-oxide1-oxide2-metal stack was provided to accommodate the evolution trend. We show that electroformed W-NbOx-Pt devices can simultaneously exhibit both threshold switching and memory switching. A qualitative model was suggested to elucidate the unique properties in a W-NbOx-Pt stack, where threshold switching is associated with a localized metal-insulator transition in the NbOx bulk, and the bipolar RS derives from a redox at the tip of the localized filament at the WOx-NbOx interface. Such a simple metal-oxide-metal structure, with functionally separated bulk and interface effects, provides a fabrication advantage for future high-density cross-point memory devices.Keywords: Bi-layer; Conceptual structures; Cross-point array; Evolution trend; High-density; Interface effect; Key parameters; Memory applications; Memory element; Memory switching; Qualitative model; Resistive switching; Switch element; Threshold switching; Metal201110.1088/0957-4484/22/47/4757022016-02-24