Buda, ManuelaIordache, GMokkapati, SudhaFu, LanJolley, GregJagadish, ChennupatiBuda, MiTan, Hark Hoe2010-09-152010-12-202010-09-152010-12-20Journal of Applied Physics 104.2 (2008): 023713/1-110021-89791089-7550http://hdl.handle.net/10440/1090http://digitalcollections.anu.edu.au/handle/10440/1090This paper demonstrates an analytical expression for the quasistatic capacitance of a quantum dot layer embedded in a junction, where the reverse bias is used to discharge the initially occupied energy levels. This analysis can be used to determine the position and the Gaussian homogeneous broadening of the energy levels in the conduction band, and is applied for an InGaAs/GaAs quantum dot structure grown by metal organic chemical vapor deposition. It is shown that the Gaussian broadening of the conduction band levels is significantly larger than the broadening of the interband photoluminescence (PL) transitions involving both conduction and hole states. The analysis also reveals a contribution from the wetting layer both in PL and modeled C-V profiles which is much stronger than in typical molecular beam epitaxy grown dots. The presence of a built-in local field oriented from the apex of the dot toward its base, contrary to the direction expected for a strained dot with uniform composition (negative dipole), is also derived from fitting of the C-V experimental data.11 pageshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2008 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)conduction bandsgallium arsenidegallium compoundsIII-V semiconductorsindium compoundsMOCVDphotoluminescencesemiconductor growthsemiconductor quantum dots2008-07-3010.1063/1.29596812015-12-08