Jin, HaoWeber, KlausBlakers, Andrew2015-12-08May 8-12 21424400163http://hdl.handle.net/1885/29156The thermal stability of Si / SiO2 stacks and Si / SiO2 / Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO2 / Si3N4 stacks have a much slower depassivation rate than Si / SiO2 stacks due to hydrogen stored in nitride layer.Keywords: Enterprise resource planning; Photoconductivity; Rapid thermal annealing; Thermodynamic stability; Thermooxidation; In-situ annealing; Nitrogen annealing; Quasi-steady state photoconductivity decay (QSSPCD); Silicon solar cells200610.1109/WCPEC.2006.2793262015-12-08