Lu, Hao FengFu, LanJolley, GregTan, Hark HoeTatavarti, Sudersena RaoJagadish, Chennupati2015-09-172015-09-170003-6951http://hdl.handle.net/1885/15520Self-assembledIn₀.₅Ga₀.₅As/GaAsquantum dotsolar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAssolar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC properties and further implementation of new solar cell designs for improved efficiency.The authors would like to acknowledge financial support from the Australian Research Council and facility support from the Australian National Fabrication Facility ACT node.4 pageshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 17/09/15)Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.3586251.Keywords: Current properties; GaAs solar cells; Ideality factors; InGaAs/GaAs; Metalorganic chemical vapor deposition; Quantum dot solar cells; Self-assembled; Solar cell design; Temperature dependence; Dark currents; Gallium; Metallorganic chemical vapor depositioTemperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells2011-05-0610.1063/1.35862512016-02-24