Berg, AlexanderCaroff, PhilippeShahid, NaeemLockrey, Markyuan, xiaomingBorgström, MagnusTan, Hark HoeJagadish, Chennupati2021-06-301998-0124http://hdl.handle.net/1885/238468Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.The Australian Research Council is acknowledged for financial support. A. Berg gratefully acknowledges scholarships from NanoLund (the Center for Nanoscience at Lund University, Sweden) and the Linnaeus Graduate School at Lund University, as well as funding from the project “Energieffektiv LED-belysning baserad på nanotrådar” financed by the Swedish Foundation for Strategic Research (SSF, project number EM11-0015).application/pdfen-AU© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016nanowireInGaPselective-area epitaxycathodoluminescenceenergy-dispersive X-ray spectroscopyGrowth and optical properties of In x Ga 1-x P nanowires synthesized by selective-area epitaxy201710.1007/s12274-016-1325-12020-11-23