Lind, A. G.Rudawski, N. G.Vito, N. J.Hatem, C.Ridgway, M. C.Hengstebeck, R.Yates, B. R.Jones, K. S.2015-10-292015-10-290003-6951http://hdl.handle.net/1885/16161A relationship between the electrical activation of Si in ion-implanted In₀.₅₃Ga₀.₄₇As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In₀.₅₃Ga₀.₄₇As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.The authors acknowledge the Semiconductor Research Corporation for funding this work.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 29/10/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.48350972013-12-0210.1063/1.48350972015-12-10