Wen, XDao, Lap VanDavis, Jeff AHannaford, PeterMokkapati, SudhaJagadish, ChennupatiTan, Hark Hoe2015-12-070957-4522http://hdl.handle.net/1885/23030In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.Keywords: Carrier relaxation dynamics; Photo-excited electrons; Phonons; Photoexcitation; Photoluminescence; Relaxation time; Semiconducting indium gallium arsenide; Semiconductor quantum dots200710.1007/s10854-007-9241-52015-12-07