Sadaf, Sharif Md.Bourim, El MostafaLiu, XinjunChoudhury, SakebKim, Dong-WookHwang, Hyunsang2015-12-100003-6951http://hdl.handle.net/1885/65455We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.Keywords: Active Layer; Epitaxial heterostructure; Epitaxially grown; Ferroelectric effects; Ferroelectric polarization; Lattice-matched; Oxygen ions; P-n junction; P-type; PZT; Resistive switching; Resistive switching behaviors; SrTiO; Electric fields; Epitaxial g201210.1063/1.36940162016-02-24