Sulzbach, M. C.Selau, F. F.Trombini, HenriqueGrande, P. L.Marmitt, G. G.Pereira, L. G.Vos, MaartenElliman, Robert2020-06-220168-583Xhttp://hdl.handle.net/1885/205404Oxygen self-diffusion was investigated in TiO2 layers employed for resistive-switching memories using resonant nuclear reaction profiling (NRP) and 18O labeling. The layers were grown using physical vapor deposition technique (sputtering) and were polycrystalline. The diffusivity was measured over the temperature range 600–800 °C and the activation energy for oxygen self-diffusion in sputter-deposited TiO2 films determined to be 1.09 ± 0.16 eV, a value consistent with results obtained by previous studies (Marmitt et al., 2017).This study was financed in part by the Coordena de Aperfei oamento de Pessoal de Nvel Superior – Brasil (CAPES) – Finance Code 001, by CNPq and PRONEX-FAPERGS. We acknowledge support from the NCRIS ANFF and Heavy-Ion Accelerator Capabilities, with particular thanks to Dr. Fouad Karouta for the deposition of the (Si3N4) at ANU. RGE and MV further acknowledge the ARC funding program for financial support.4 pagesapplication/pdfen-AU© 2019 Elsevier B.V. . Elsevier requires authors posting their accepted manuscript to attach a non-commercial Creative Commons user license (CC-BY-NC-ND). Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ https://www.elsevier.com/about/policies/sharing (Publisher journal website as of 22/6/2020)Resistive memories, Diffusion mechanisms, Nuclear Reaction Analysis, Conducting filaments2019-02-1510.1016/j.nimb.2018.11.0262020-01-19