Naureen, SShahid, NaeemSanatinia, RezaAnand, S2015-12-101616-3028http://hdl.handle.net/1885/60915In the fabrication of III-V semiconductor nanostructures for electronic and optoelectronic devices, techniques that are capable of removing material with monolayer precision are as important as material growth to achieve best device performances. A robust chemical treatment is demonstrated using sulfur (S)-oleylamine (OA) solution, which etches layer by layer in an inverse epitaxial fashion and simultaneously passivates the surface. The application of this process to push the limits of top-down nanofabrication is demonstrated by the realization of InP-based high optical quality nanowire arrays, with aspect ratios more than 50, and nanostructures with new topologies. The findings are relevant for other III-V semiconductors and have potential applications in III-V device technologies.Keywords: Chemical treatments; Device performance; Device technologies; II-IV semiconductors; Optical qualities; Semiconductor nanostructures; Surface passivation; Top-down fabrication; Aspect ratio; Fabrication; Membranes; Monolayers; Nanowires; Semiconductor grow membranes; monolayer etching; nanowires; semiconductor nanostructures; surface passivation; top-down fabrication201310.1002/adfm.2012022012016-02-24