Kerr, Mark J.Cuevas, AndresSinton, Ronald A.2015-10-162015-10-160021-8979http://hdl.handle.net/1885/15947The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Vocmeasurements(QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivitysilicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.This work has been funded by the Australian Research Council. The authors also thank S. Glunz and S. Rein from the Fraunhofer Institute of Solar Energy Systems, for the use of the solar cell used in Fig. 5.http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 16/10/15). Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1416134Keywords: Device characteristics; High resistivity silicon devices; Minority carrier lifetimes; Photoconductance; Quasi-steady state; Transient decay; Transient techniques; Varying lights; Open circuit voltage; Slow light; Current voltage characteristics2002-01-0110.1063/1.14161342015-12-10