Pyke, DanielElliman, RobertMcCallum, Jeffrey C.2015-12-130168-583Xhttp://hdl.handle.net/1885/75023The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for blisteKeywords: Blister; Blister formation; Dissociation energies; Hydrogen blistering; Hydrogen migration; Single activation energy; Temperature dependence; Temperature range; Activation energy; Germanium; Silicon; Temperature distribution; Hydrogen Blister; Germanium; Hydrogen; Silicon201310.1016/j.nimb.2012.10.0372016-02-24