Ren, Fang-FangAng, Kah-WeeSong, JunfengFang, QingYu, MingbinLo, Guo-QiangKwong, Dim-Lee2015-10-282015-10-280003-6951http://hdl.handle.net/1885/16145The authors report on high transverse magnetic (TM)-mode responsivity in a waveguided germaniumSchottky-barriermetal-semiconductor-metalphotodetector on silicon-on-insulator substrate for operating wavelength at 1550 nm. The employed aluminum interdigitated electrodes act as a one-dimensional rectangular grating above the depletion layer. By means of properly designed finger dimensions, surface plasmon polariton resonances can be excited at the interface of metal and silicon interfacial layer due to grating coupling. The resulting strong field intensities reach into active region, enabling high absorption under TM injection. At a voltage of 1 V, the TM-mode photocurrent is measured over three times than that of transverse electric mode, in spite of the relatively larger TM insertion loss in the silicon waveguide.This work is supported by Agency for Science, Technology and Research A*STAR SERC Science and Engineering Research Council Grant Programme SERC Grant No. 092 154 0098, Singapore.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 28/10/15). Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3485064Keywords: 1550 nm; Active regions; Depletion layer; Grating coupling; Inter-digitated electrodes; Interfacial layer; Metal semiconductor metal photodetector; Operating wavelength; Responsivity; Schottky barriers; Silicon waveguide; Silicon-on-insulator substrates;2010-08-3010.1063/1.34850642016-02-24